NAND Flash (基本概念)
2011年9月29日 — Command 80h 會將NAND Flash 內部的buffer 清為FFh,接下來的Address,代表你要對從哪一個Block的哪一個page的哪一個位址開始修改資料,然後data cycle ...
高效能之NAND型快閃記憶體控制器
由 高于翔 著作 · 2009 — Basic NAND flash commands include reset, read, program and erase. As mentioned in Section 2.3, NAND flash memory has to erase before a new data programmed, ...
NAND Flash Memory
The READ PAGE (00h-30h) command, when issued by itself, reads one page from the NAND Flash array to its cache register and enables data output for that cache ...
TN-29-19
由 N Flash 著作 — Commands, addresses, and data are clocked into the NAND Flash device on the rising edge of WE# (see Figure 4 and Table 5 on page 8). Most commands require a ...
NAND Flash memory in embedded systems
由 M Jedrak 著作 · 被引用 13 次 — The NAND Flash memory is controlled using set of commands; set that vary from memory to memory. According to ONFI Standard (5) the below list is a basic ...
TN-29-01
The PAGE READ CACHE MODE command (31h) is used to transfer the page 0 data from the data register to the cache register and initiate a concurrent READ of the ...
NAND Flash Interface Design Example
This file contains source code for the NAND I/O drivers, which represent the standard command set for Micron NAND flash devices. The NAND I/O drivers handle the ...
NAND FLASH Programming User's Guide
Access to the NAND Flash is performed by an on-chip NAND Flash controller. ... The following command is available to modify the contents of the NAND Flash memory.